KMPE3200系列光刻胶是专为LiftOff工艺开发的紫外负性光刻胶,相比E3100,其膜厚更厚,覆盖的范围为6.0-12.0um。其具有可调整的倒梯角度、分辨率高、工艺窗口大及易去胶等优点,广泛用于LED芯片制造过程中的LiftOff工艺,特别是LED高功率器件以及倒装工艺芯片制造过程。
N3120A1 | R:2μm@4μm,Thickness:4.5-9.5μm, High heat resistance | IC/LED |
E3130A | Lift off negative resist,High resolution | IC/LED |
E3260A2/S | R:5μm@8μm,<100mj/cm2,Thickness:6-12μm | IC/LED |
E3502 | R:0.6μm@2.4μm,Thickness:2-4μm,Easy strip | IC/LED |
E3510 | R:6μm@14μm,Thickness:5-20μm,Easy strip | IC/LED |
E3175/B | R:2.0μm@3.8μm,Small undercut,Thickness:2-4μm | IC/LED |